HB00900 - SEMI HB9 - Test Method and Acceptance Criteria for Visual Inspection of Surface Defects of GaN Epitaxial Wafers Used for Manufacturing HB-LED Revision:SEMI HB9-0818 - Inactive SEMI D51 — Specification for

SEMI D51 — Specification for Handshake Protocol of Single Substrate for Handling off/on Tool in FPD Production

previously published in 1994

SEMI MF1725-1110 (technical revision)

SEMI E111-0117 (technical revision)

The pellicle exclusion volume of this Specification accommodates pellicles which extend the full length of the reticle and up to a maximum pellicle width of 124 mm

HB00900 - SEMI HB9 - Test Method and Acceptance Criteria for Visual Inspection of Surface Defects of GaN Epitaxial Wafers Used for Manufacturing HB-LED Revision:SEMI HB9-0818 - Inactive SEMI D51 — Specification forNOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and continue to be valid for use. The purpose of this Standard is to provide test methods to visually detect surface defects of GaN epitaxial wafer for manufacturing high brightness LEDs, and to define acceptance criteria for the types, number, size, and